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BUK9226-75A
TrenchMOSTM logic level FET
Rev. 01 -- 10 October 2000 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology, featuring very low on-state resistance. Product availability: BUK9226-75A in SOT428 (D-PAK).
2. Features
s s s s TrenchMOSTM technology Q101 compliant 175 C rated Logic level compatible.
3. Applications
s Automotive and general purpose power switching x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids.
c c
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g)
mb
Simplified outline
Symbol
drain (d) source (s) mounting base; connected to drain (d)
g
2 1 Top view 3
MBK091
d
MBB076
s
SOT428 (D-PAK)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 C; VGS = 5 V Tmb = 25 C VGS = 5 V; ID = 25 A VGS = 4.5 V; ID = 25 A Typ - - - - 22.1 - Max 75 45 114 175 26 29 Unit V A W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
m m
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IDR IDRM WDSS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) non-repetitive gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 49 A; VDS 75 V; VGS = 5 V; RGS = 50 ; starting Tj = 25C tp 50 s Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 Tmb = 25 C; pulsed; tp 10 s; Figure 3; Tmb = 25 C; Figure 1 RGS = 20 k Conditions Min - - - - - - [1] - - -55 -55 - - - Max 75 75 10 15 45 32 182 114 +175 +175 45 182 120 Unit V V V V A A A W C C A A mJ
Source-drain diode
Avalanche ruggedness
[1]
IDM is limited by chip, not package.
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
2 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
120 Pder
(%)
03aa16
03aa24
100
120 Ider (%) 100
80
80
60
60
40
40
20
20
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
0 0 25 50 75 100 125 150 175 200
Tmb (oC)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 4.5 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
1000 ID (A) RDSon = VDS/ ID
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
03nb19
100
tp = 10 us
100 us
P
10
=
tp T
D.C.
1 ms
tp T
t
10 ms 100 ms 10 100
1 1 VDS (V)
Tmb = 25 C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
3 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
7. Thermal characteristics
Table 4: Rth(j-a) Rth(j-mb) Thermal characteristics Conditions minimum footprint; FR4 board Figure 4 Value Unit 71.4 1.3 K/W K/W thermal resistance from junction to ambient thermal resistance from junction to mounting base Symbol Parameter
7.1 Transient thermal impedance
10 Zth(j-mb) (K/W) 1
0.5 0.2 0.1
03nb20
0.1
0.05
0.02
P
=
tp T
0.01
Single Shot
tp T
t
0.001 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
4 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 10 V; VDS = 0 V VGS = 5 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS = 4.5 V; ID = 25 A; Tj = 25 C VGS = 10 V; ID = 25 A; Tj = 25 C Dynamic characteristics Ciss Coss Crss td(on) tr td(off) tf Ld Ls input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance measured from drain lead from package to centre of die measured from source lead from package to source bond pad VDD = 30 V; RL = 1.2 ; VGS = 5 V; RG = 10 ; VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - - - - - - - - - 2340 3120 pF 319 215 24 141 142 108 2.5 7.5 383 295 - - - - - - pF pF ns ns ns ns nH nH - - - - 22.1 - - 20.9 26 54.6 29 24.6 m m m m - - - 0.05 - 2 10 500 100 A A nA 1 0.5 - 1.5 - - 2 - 2.3 V V V 75 70 - - - - V V Conditions Min Typ Max Unit
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
5 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
Table 5: Characteristics...continued Tj = 25 C unless otherwise specified Symbol Parameter Source-drain diode VSD trr Qr source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15 reverse recovery time recovered charge IS = 20 A; dIS/dt = -100 A/s; VGS = -10 V; VDS = 30 V - - - 0.85 49 115 1.2 - - V ns nC Conditions Min Typ Max Unit
ID 200 (A) 180 160 140 120 100 80 60 40 20 0 0
03nb16
VGS = 10(V)
8 7 6 5
35 RDSon (mOhm) 30
03nb15
4
25
20 3 15
2 2 4 6 8 10 VDS (V)
10 2 4 6 8 VGS(V) 10
Tj = 25 C
Tj = 25 C; ID = 25 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. On-state resistance: typical values.
RDSon 60 (mOhm) 55 50 45 40 35 30 25 20 15 10 10 30
03nb17
2.4 a 2.2 2.0
03nb25
VGS= 3 (V) 3.4 3.2
3.6 3.8 4 5
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
50
70
90
110
130
150 170 ID (A)
-60
-20
20
60
100
140 180 Tj (oC)
Tj = 25 C
R DSon a = --------------------------R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
6 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
2.5 VGS(th)
(V) max
03aa33
10-1
ID (A) 10-2
03aa36
2
typ
1.5
min
10-3
min
typ
max
1
10-4
0.5
10-5
0 -60 -20 20 60 100 140 180 Tj (oC)
10-6
0 0.5 1 1.5 2 2.5
VGS (V)
3
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
60 gfs (S) 50
03nb13
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
6000 C (pF) 5000
03nb18
40
4000
30
3000 Ciss
20
2000
10
1000 Coss Crss 0.1 1 10 V (V) 100 DS
0 0 20 40 60 ID (A) 80
0 0.01
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
7 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
ID (A)
45 40 35 30 25 20
03nb14
VGS 5 (V) 4.5 4 3.5 VDS= 14(V) 3 2.5 2
03nb12
VDS= 60(V)
15 10 5 0 0.0 0.5 1.0
Tj = 175 C Tj = 25 C
O
O
1.5 1 0.5 0
1.5
2.0
2.5 3.0 VGS(V)
0
10
20
30
40 50 QG(nC)
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics; typical values.
Fig 14. Turn-on gate charge characteristics; typical values.
60 IS (A) 50
03nb11
40 Tj = 175 C 30
O
20 Tj = 25 C 10
O
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V)
VGS = 0 V
Fig 15. Reverse diode current; typical values.
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
8 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428
seating plane y A E b2 A A1 mounting base A2 D1
E1 D HE L2
2
L L1
1
b1 e e1 b
3
wM A c
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) A UNIT max. mm 2.38 2.22 A1(1) 0.65 0.45 A2 0.89 0.71 b 0.89 0.71 b1 max. 1.1 0.9 b2 5.36 5.26 c 0.4 0.2 D1 E D max. max. max. 6.22 5.98 4.81 4.45 6.73 6.47 E1 min. 4.0 e e1 HE max. 10.4 9.6 L 2.95 2.55 L1 min. 0.5 L2 0.7 0.5 w 0.2 y max. 0.2
2.285 4.57
Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC TO-252 EIAJ SC-63 EUROPEAN PROJECTION ISSUE DATE 98-04-07 99-09-13
Fig 16. SOT428 (D-PAK).
9397 750 07585 (c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
9 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
10. Revision history
Table 6: 01 Revision history CPCN Description Product specification; initial version.
Rev Date 20001010
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
10 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
11. Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Product specification
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 07585
(c) Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
11 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
Philips Semiconductors - a worldwide company
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Internet: http://www.semiconductors.philips.com
(SCA70)
9397 750 07585
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 -- 10 October 2000
12 of 13
Philips Semiconductors
BUK9226-75A
TrenchMOSTM logic level FET
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
(c) Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 October 2000 Document order number: 9397 750 07585

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